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2STF1340 - Low voltage fast-switching NPN power bipolar transistor

Description

The device in a NPN transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology.

The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

The complementary PNP is the 2STF2340.

Features

  • Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-89 plastic package for surface mounting circuits In compliance with the 2002/93/EC European Directive SOT-89.

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www.DataSheet4U.com 2STF1340 Low voltage fast-switching NPN power bipolar transistor Preliminary Data General features ■ ■ ■ ■ Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-89 plastic package for surface mounting circuits In compliance with the 2002/93/EC European Directive SOT-89 ■ Description The device in a NPN transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. The complementary PNP is the 2STF2340.
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