2N5886
DESCRIPTION
The 2N5886 is a silicon Epitaxial-Base NPN power transistor mounted in Jedec TO-3 metal case. It is inteded for use in power linear amplifiers and switching applications.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating Junction Temperature Value 80 80 5 25 50 7.5 200 -65 to 200 200 Unit V V V A A A W o o
January 2000
1/4
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 0.875 o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
Symbol I CEV I CBO I CEO I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 80...
