2N5886
Features
:
- Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 15A.
- Excellent DC current Gain h FE = 20 ~ 100 at IC = 10A.
Pin 1. Base 2. Emitter Collector(Case)
Maximum Ratings
Dimensions Minimum Maximum
C 7.96 9.28
F 0.92 1.09
G 1.38 1.62
J 3.88 4.36
Dimensions : Millimetres
PNP 2N5884
NPN 2N5886
25 Ampere plementary Silicon
Power Transistors 80 Volts 200 Watts
TO-3
Characteristic
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous -Peak
Base Current
Total Power Dissipation at TC = 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
Characteristic Thermal Resistance Junction to Case
Symbol Rθjc
VCEO VCBO...
