Datasheet4U Logo Datasheet4U.com

21N65M5 - N-Channel MOSFET

Description

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

Features

  • Order codes VDSS @ TJmax RDS(on) max ID PW STB21N65M5 STF21N65M5 17 A 125 W 17 A(1) 30 W STI21N65M5 710 V < 0.179 Ω STP21N65M5 17 A 125 W STW21N65M5 1. Limited only by maximum temperature allowed.
  • Worldwide best RDS(on).
  • area.
  • Higher VDSS rating.
  • High dv/dt capability.
  • Excellent switching performance.
  • 100% avalanche tested.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
21N60 N-Channel MOSFET Inchange Semiconductor
21N60 IXFH21N60 IXYS Corporation
21N05L SPU21N05L Siemens
21N05L SPD21N05L Infineon
21N06 MOSFET GOFORD

Other Datasheets by STMicroelectronics

Part Number Description
21N150K5 N-CHANNEL MOSFET

Full PDF Text Transcription

Click to expand full text
STB21N65M5, STF21N65M5 STI21N65M5, STP21N65M5, STW21N65M5 N-channel 650 V, 0.150 Ω, 17 A MDmesh™ V Power MOSFET D²PAK, TO-220FP, TO-220, I²PAK, TO-247 Features Order codes VDSS @ TJmax RDS(on) max ID PW STB21N65M5 STF21N65M5 17 A 125 W 17 A(1) 30 W STI21N65M5 710 V < 0.179 Ω STP21N65M5 17 A 125 W STW21N65M5 1. Limited only by maximum temperature allowed ■ Worldwide best RDS(on) * area ■ Higher VDSS rating ■ High dv/dt capability ■ Excellent switching performance ■ 100% avalanche tested Application Switching applications Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.
Published: |