21N06 - MOSFET

Description

The 21N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDSS R DS(ON) ID @ 10V (typ) 60V 24 m Ω 21 A.
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

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21N06 mosfet by GOFORD - Datasheet Preview

Datasheet Details

Part number	21N06
Manufacturer	GOFORD
File Size	1.39 MB
Description	MOSFET
Datasheet	21N06 Datasheet

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Full PDF Text Transcription

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GOFORD DESCRIPTION The 21N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Published: Nov 14, 2024 |