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20NM60 - N-CHANNEL POWER MOSFET

General Description

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.

The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.

Key Features

  • TYPE VDSS RDS(on) ID STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 600 V 600 V 600 V 600 V 600 V < 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω 20 A 20 A 20 A 20 A 20 A s.

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Full PDF Text Transcription for 20NM60 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 20NM60. For precise diagrams, and layout, please refer to the original PDF.

STP20NM60-STP20NM60FP-STW20NM60 STB20NM60 - STB20NM60-1 N-CHANNEL 600V - 0.25Ω - 20A TO-220/FP/D²/I²PAK/TO-247 MDmesh™ MOSFET Table 1: General Features TYPE VDSS RDS(on) ...

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PAK/TO-247 MDmesh™ MOSFET Table 1: General Features TYPE VDSS RDS(on) ID STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 600 V 600 V 600 V 600 V 600 V < 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω 20 A 20 A 20 A 20 A 20 A s TYPICAL RDS(on) = 0.25 Ω s HIGH dv/dt AND AVALANCHE CAPABILITIES s 100% AVALANCHE TESTED s LOW INPUT CAPACITANCE AND GATE CHARGE s LOW GATE INPUT RESISTANCE DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and

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