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20N65M5 - N-Channel MOSFET

General Description

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

Key Features

  • Order codes STB20N65M5 STI20N65M5 STP20N65M5 STW20N65M5 VDS @ TJmax RDS(on) max ID 710 V 0.19 Ω 18 A.
  • Worldwide best RDS(on).
  • area.
  • Higher VDSS rating and high dv/dt capability.
  • Excellent switching performance.
  • 100% avalanche tested.

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Full PDF Text Transcription for 20N65M5 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 20N65M5. For precise diagrams, and layout, please refer to the original PDF.

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 N-channel 650 V, 0.160 Ω typ., 18 A MDmesh™ V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages Datasheet — producti...

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OSFET in D2PAK, I2PAK, TO-220 and TO-247 packages Datasheet — production data Features Order codes STB20N65M5 STI20N65M5 STP20N65M5 STW20N65M5 VDS @ TJmax RDS(on) max ID 710 V 0.19 Ω 18 A ■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance ■ 100% avalanche tested Applications ■ Switching applications TAB 2 3 1 D2PAK TAB TAB 123 I2PAK 3 2 1 TO-220 3 2 1 TO-247 Figure 1.

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