GD400FFX65P3S
Description
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicles.
Features
- Low VCE(sat) Trench IGBT technology
- 6μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175o C
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
Typical Applications
- Automotive application
- Hybrid and electric vehicle
- Inverter for motor drive
Equivalent Circuit Schematic
IGBT Module
IGBT
©2019 STARPOWER Semiconductor Ltd. 1/7/2019 1/10 Preliminary
IGBT Module
Absolute Maximum Ratings TC=25o C unless otherwise noted
IGBT
Symbol VCES VGES
ICM PD
Description
Collector-Emitter Voltage
Gate-Emitter Voltage Collector Current @ TC=25o C
@ TC=65o C
Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175o C
Diode
Symbol VRRM IF...
