GD400FFX65P3H
Description
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicles.
Features
- Low VCE(sat) Trench IGBT technology
- 6μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175o C
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
Typical Applications
- Automotive application
- Hybrid and electric vehicle
- Inverter for motor drive
Equivalent Circuit Schematic
IGBT Module
IGBT
©2018 STARPOWER Semiconductor Ltd.
3/17/2018
1/9 Preliminary
IGBT Module
Absolute Maximum Ratings TF=25o C unless otherwise noted
IGBT
Symbol VCES VGES
ICM PD
Description
Collector-Emitter Voltage
Gate-Emitter Voltage Collector Current @ TF=25o C
@ TF=65o C
Pulsed Collector Current tp=1ms Maximum Power Dissipation @ TF=175o C
Diode
Symbol VRRM IF...
