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STX13004 - High voltage fast-switching NPN power transistor

Description

The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability.

It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

Features

  • High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed.

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Full PDF Text Transcription

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STX13004 www.datasheet4u.com High voltage fast-switching NPN power transistor Features ■ ■ ■ ■ High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications ■ SMPS for battery charger TO-92 TO-92AP Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STX13004G and STX13004G-AP are supplied using halogen-free molding compound. Figure 1. Internal schematic diagram Table 1.
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