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STX112 - Complementary power Darlington transistors

Description

The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration.

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TO-92 AP Figure 1.

Features

  • Good hFE linearity.
  • High fT frequency.
  • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode.

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Full PDF Text Transcription

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STX112 STX117 Complementary power Darlington transistors Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Linear and switching industrial equipment Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. . TO-92 AP Figure 1. Internal schematic diagram R1 typ. = 15 kΩ R2 typ. = 100 Ω Table 1. Device summary Order codes Marking STX112-AP X112 STX117-AP X117 April 2010 Polarity NPN PNP Doc ID 6881 Rev 4 Package TO92-AP TO92-AP Packaging Ammopack Ammopack 1/9 www.st.com 9 Absolute maximum ratings 1 Absolute maximum ratings Note: Table 2.
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