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STP5NC90ZFP - N-Channel MOSFET

Download the STP5NC90ZFP datasheet PDF. This datasheet also covers the STP5NC90Z variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.

Key Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/13 STP5NC90Z.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP5NC90Z_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STP5NC90Z N-Channel MOSFET
STP5NC50 N-Channel MOSFET
STP5NC50FP N-Channel MOSFET
STP5N60 N-Channel Enhancement Mode Power MOS Transistor
STP5N60FI N-Channel Enhancement Mode Power MOS Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STP5NC90Z - STP5NC90ZFP STB5NC90Z - STB5NC90Z-1 N-CHANNEL 900V - 2.1Ω - 4.6A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET TYPE STP5NC90Z/FP STB5NC90Z/-1 s s VDSS 900V 900V RDS(on) < 2.5Ω < 2.5Ω ID 4.6 A 4.6 A 1 3 s s s TYPICAL RDS(on) = 2.1Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED D²PAK TO-220 3 1 2 TO-220FP 12 3 DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.