Datasheet4U Logo Datasheet4U.com

STP5NC50FP - N-Channel MOSFET

Download the STP5NC50FP datasheet PDF. This datasheet also covers the STP5NC50 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ .

area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP5NC50_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
STP5NC70Z N-CHANNEL MOSFET STMicroelectronics
STP5NC70ZFP N-CHANNEL MOSFET STMicroelectronics
STP5N105K5 N-channel Power MOSFET STMicroelectronics
STP5N120 N-Channel Power MOSFET STMicroelectronics
STP5N60M2 N-channel Power MOSFET STMicroelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STP5NC50 N-Channel MOSFET
STP5NC90Z N-Channel MOSFET
STP5NC90ZFP N-Channel MOSFET
STP5N60 N-Channel Enhancement Mode Power MOS Transistor
STP5N60FI N-Channel Enhancement Mode Power MOS Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STP5NC50 - STP5NC50FP STB5NC50 - STB5NC50-1 N-CHANNEL 500V - 1.3Ω - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh™ II MOSFET TYPE STP5NC50 STP5NC50FP STB5NC50 STB5NC50-1 s s s s s VDSS 500 500 500 500 V V V V RDS(on) < 1.5Ω < 1.5Ω < 1.5Ω < 1.5Ω ID 5.5A 5.5A 5.5A 5.5A 3 1 TYPICAL RDS(on) = 1.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220 D2PAK TO-220FP 3 12 DESCRIPTION The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.