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STN951 - Low voltage fast-switching PNP power transistor

Description

The device is manufactured in PNP planar technology by using a “Base Island” layout.

The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

Figure 1.

Features

  • Very low collector-emitter saturation voltage.
  • High current gain characteristic.
  • Fast switching speed.
  • Surface mounting device in medium power SOT-223 package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STN951 Low voltage fast-switching PNP power transistor Features ■ Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Surface mounting device in medium power SOT-223 package Applications ■ Emergency lighting ■ Voltage regulators ■ Relay drivers ■ High efficiency low voltage switching applications Description The device is manufactured in PNP planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. 4 3 2 1 SOT-223 Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STN951 N951 October 2008 Package SOT-223 Rev 3 Packaging Tape and reel 1/8 www.st.com 8 Contents STN951 1 Electrical ratings . . .
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