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STN93003 - High voltage fast-switching PNP power transistor

Description

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

Features

  • Medium voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed SOT-223 plastic package for surface mounting circuits Tape and reel packing 1 2 2 3.
  • SOT-223.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com STN93003 High voltage fast-switching PNP power transistor General features ■ ■ ■ ■ ■ Medium voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed SOT-223 plastic package for surface mounting circuits Tape and reel packing 1 2 2 3 ■ SOT-223 Applications ■ ■ Electronics ballasts for fluorescent lighting Switch mode power supplies Internal schematic diagram Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
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