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STGW39NC60VD - N-CHANNEL IGBT

General Description

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Figure 1.

Table 1.

Key Features

  • Low CRES / CIES ratio (no cross conduction susceptibility).
  • IGBT co-packaged with ultra fast free-wheeling diode.

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STGW39NC60VD 40 A - 600 V - very fast IGBT Features ■ Low CRES / CIES ratio (no cross conduction susceptibility) ■ IGBT co-packaged with ultra fast free-wheeling diode Applications ■ High frequency inverters ■ UPS ■ Motor drivers ■ Induction heating Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. 3 2 1 TO-247 Figure 1. Internal schematic diagram Table 1. Device summary Order code STGW39NC60VD Marking GW39NC60VD Package TO-247 Packaging Tube July 2008 Rev 8 1/15 www.st.com 15 Contents Contents STGW39NC60VD 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . .