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STGB8NC60KD - short circuit rugged IGBT

General Description

These devices are very fast IGBTs developed using advanced PowerMESH technology.

This process guarantees an excellent trade-off between switching performance and low on-state behavior.

These devices are well-suited for resonant or soft-switching applications.

Key Features

  • Lower on voltage drop (VCE(sat)).
  • Lower Cres / Cies ratio (no cross-conduction susceptibility).
  • Very soft ultra fast recovery antiparallel diode.
  • Short-circuit withstand time 10 μs.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGB8NC60KD, STGD8NC60KD STGF8NC60KD, STGP8NC60KD Datasheet 8 A, 600 V short-circuit rugged IGBT TAB 3 1 D2 PAK TAB 23 1 DPAK TAB 3 2 1 TO-220FP TO-220 1 23 C(2, TAB) G(1) E(3) NG1E3C2T Features • Lower on voltage drop (VCE(sat)) • Lower Cres / Cies ratio (no cross-conduction susceptibility) • Very soft ultra fast recovery antiparallel diode • Short-circuit withstand time 10 μs Applications • High frequency motor controls • SMPS and PFC in both hard switch and resonant topologies • Motor drives Description These devices are very fast IGBTs developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications.