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STGB8NC60K - (STGx8NC60K) Short circuit rated PowerMESH IGBT

General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.

Key Features

  • Type STGB8NC60K STGD8NC60K STGP8NC60K.
  • VCES 600V 600V 600V VCE(sat)Typ @25°C 2.2V 2.2V 2.2V IC @100°C 8A 8A 8A 3 1 2 3 1 DPAK TO-220 Lower on voltage drop (Vcesat) Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode Short circuit withstand time 10µs Figure 1. Internal schematic diagram 3 1 D²PAK.

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www.DataSheet4U.com STGB8NC60K - STGD8NC60K STGP8NC60K N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH™ IGBT Features Type STGB8NC60K STGD8NC60K STGP8NC60K ■ ■ ■ ■ VCES 600V 600V 600V VCE(sat)Typ @25°C 2.2V 2.2V 2.2V IC @100°C 8A 8A 8A 3 1 2 3 1 DPAK TO-220 Lower on voltage drop (Vcesat) Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode Short circuit withstand time 10µs Figure 1.