Datasheet4U Logo Datasheet4U.com

STC05IE150HV - Emitter Switched Bipolar Transistor

General Description

The STC05IE150HV is manufactured in Monolithic ESBT Technology, aimed to provide best performance in high frequency / high voltage applications.

it is designed for use in Gate Driven based topologies.

Key Features

  • VCS(ON) 0.6 V.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STC-013-000 Transformer YHDC
STC-R640 high resolution CCD Color Cameras KMIS
STC10F04 MCU STC Technology
STC10F04XE MCU STC Technology
STC10F06 MCU STC Technology

Other Datasheets by STMicroelectronics

Part Number Description
STC05IE150HP Emitter Switched Bipolar Transistor
STC05DE120HV Hybrid emitter switched bipolar transistor
STC05DE150 HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR
STC03DE150 HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR
STC03DE170 HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com STC05IE150HV Emitter Switched Bipolar Transistor ESBT® 1500 V - 5 A - 0.12 Ω Features VCS(ON) 0.6 V ■ PRELIMINARY DATA IC 5A RCS(ON) 0.12 W High voltage / high current Cascode configuration Low equivalent on resistance Very fast-switch, up to 150 kHZ Squared rbsoa, up to 1500 V Very low C ISS driven by RG = 47 Ω Very low turn-off cross over time In compliance with the 2002/93/EC European Directive ■ ■ ■ ■ ■ ■ 1 23 4 TO247-4LHV Applications ■ ■ Aux SMPS for three phase mains Sepic PFC Internal Schematic Diagram Description The STC05IE150HV is manufactured in Monolithic ESBT Technology, aimed to provide best performance in high frequency / high voltage applications. it is designed for use in Gate Driven based topologies.