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STC05DE120HV - Hybrid emitter switched bipolar transistor

General Description

The STC05DE120HV is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology.

The STC05DE120HV is designed for use in aux flyback smps for any three phase application.

Key Features

  • Table 1. VCS(ON) 0.9V.
  • General features IC 5A RCS(ON) 0.18Ω High voltage / low current Cascode configuration Low equivalent on resistance Very fast-switch, up to 150kHz Squared RBSOA, up to 1200V Very low CISS driven by RG = 47Ω In compliance with the 2002/93/EC European Directive 1.
  • 23 4 TO247-4L HV Internal schematic diagrams.

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STC05DE120HV Hybrid emitter switched bipolar transistor ESBT® 1200V - 5A - 0.18 W Target Specification General features Table 1. VCS(ON) 0.9V ■ General features IC 5A RCS(ON) 0.18Ω High voltage / low current Cascode configuration Low equivalent on resistance Very fast-switch, up to 150kHz Squared RBSOA, up to 1200V Very low CISS driven by RG = 47Ω In compliance with the 2002/93/EC European Directive 1 ■ ■ ■ ■ ■ 23 4 TO247-4L HV Internal schematic diagrams Description www.DataSheet4U.com The STC05DE120HV is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC05DE120HV is designed for use in aux flyback smps for any three phase application.