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STB76NF80
N-channel 80 V, 0.0095 Ω, 80 A D2PAK STripFET™ II Power MOSFET
Features
Type STB76NF80 VDSS 80 V RDS(on) max ID
< 0.011 Ω 80 A(1)
3 1
1. Current limited by package ■ ■
Exceptional dv/dt capability 100% avalanche tested
D²PAK
Application
■
Switching applications – Automotive Figure 1. Internal schematic diagram
$ 4!" OR
Description
This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
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3
!-V
Table 1.