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Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
STB75NF75T4
·FEATURES ·With To-263(D2PAK) package ·Excellent switching performance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
75
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃
( TJ=175℃)
TC=125℃
Drain Current-Single Pulsed
±20
80 70
320
PD
Total Dissipation @TC=25℃
300
Tch
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 2.