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STB75NF75T4 - N-Channel MOSFET

Datasheet Summary

Features

  • With To-263(D2PAK) package.
  • Excellent switching performance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number STB75NF75T4
Manufacturer INCHANGE
File Size 199.18 KB
Description N-Channel MOSFET
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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB75NF75T4 ·FEATURES ·With To-263(D2PAK) package ·Excellent switching performance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ ( TJ=175℃) TC=125℃ Drain Current-Single Pulsed ±20 80 70 320 PD Total Dissipation @TC=25℃ 300 Tch Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 2.
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