Datasheet4U Logo Datasheet4U.com

STB20NK50Z - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

c This device is an N-channel Zener-protected u Power MOSFET developed using d STMicroelectronics’ SuperMESH™ technology, ro achieved through optimization of ST’s well P established strip-based PowerMESH™ layout.

Features

  • Type VDSS RDS(on) max ID PW STB20NK50Z 500 V < 0.27 Ω 17 A 190 W ct(s).
  • Extremely high dv/dt capability du.
  • 100% avalanche tested ro.
  • Gate charge minimized P.
  • Very low intrinsic capacitances te.
  • Very good manufacturing repeatability sole.

📥 Download Datasheet

Datasheet preview – STB20NK50Z

Datasheet Details

Part number STB20NK50Z
Manufacturer STMicroelectronics
File Size 431.82 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet STB20NK50Z Datasheet
Additional preview pages of the STB20NK50Z datasheet.

📁 Similar Datasheet

  • STB20N60M2-EP - N-CHANNEL POWER MOSFET (STMicroelectronics)
  • STB20N65M5 - N-Channel MOSFET (INCHANGE)
  • STB20N65M5 - N-channel Power MOSFET (STMicroelectronics)
  • STB20N90K5 - N-channel Power MOSFET (STMicroelectronics)
  • STB20N95K5 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • STB20N95K5 - N-channel Power MOSFET (STMicroelectronics)
  • STB20NF06L - N-channel Power MOSFET (STMicroelectronics)
  • STB20NM50 - N-Channel MOSFET (INCHANGE)
  • STB20NM50-1 - N-Channel MOSFET (INCHANGE)
  • STB20NM50FD - N-Channel MOSFET (INCHANGE)
Other Datasheets by ST Microelectronics

Full PDF Text Transcription

Click to expand full text
STB20NK50Z N-channel 500 V, 0.23 Ω, 17 A SuperMESH™ Power MOSFET Zener-protected in D²PAK package Datasheet — obsolete product Features Type VDSS RDS(on) max ID PW STB20NK50Z 500 V < 0.27 Ω 17 A 190 W ct(s) ■ Extremely high dv/dt capability du ■ 100% avalanche tested ro ■ Gate charge minimized P ■ Very low intrinsic capacitances te ■ Very good manufacturing repeatability sole Application Ob ■ Switching applications t(s) - Description c This device is an N-channel Zener-protected u Power MOSFET developed using d STMicroelectronics’ SuperMESH™ technology, ro achieved through optimization of ST’s well P established strip-based PowerMESH™ layout.
Published: |