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STB20NK50Z-S - N-CHANNEL POWER MOSFET

This page provides the datasheet information for the STB20NK50Z-S, a member of the STB20NK50Z N-CHANNEL POWER MOSFET family.

Datasheet Summary

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripINTERNAL SCHEMATIC DIAGRAM based PowerMESH™ layout.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13 www. DataS.

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Datasheet Details

Part number STB20NK50Z-S
Manufacturer STMicroelectronics
File Size 431.82 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet STB20NK50Z-S Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com STP20NK50Z - STW20NK50Z STB20NK50Z - STB20NK50Z-S N-CHANNEL 500V -0.23Ω- 17A TO-220/D2PAK/I2SPAK/TO-247 Zener-Protected SuperMESH™ MOSFET TYPE STB20NK50Z STB20NK50Z-S STP20NK50Z STW20NK50Z s s s VDSS 500 500 500 500 V V V V RDS(on) < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω ID 17 17 17 17 A A A A Pw 190 190 190 190 W W W W 1 3 2 1 2 3 s s TYPICAL RDS(on) = 0.23 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTEDGATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 TO-247 3 12 3 1 I2SPAK D2PAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripINTERNAL SCHEMATIC DIAGRAM based PowerMESH™ layout. In addition to pushing www.DataSheet4U.
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