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STB16NK60Z-S - N-CHANNEL MOSFET

Download the STB16NK60Z-S datasheet PDF. This datasheet also covers the STB16NK60Z variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/11 STP16NK60.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STB16NK60Z_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

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Full PDF Text Transcription

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www.DataSheet4U.com STP16NK60Z - STB16NK60Z-S STW16NK60Z N-CHANNEL 600V - 0.38Ω - 14A TO-220 / I2SPAK / TO-247 Zener-Protected SuperMESH™ MOSFET TYPE STP16NK60Z STB16NK60Z-S STW16NK60Z s s s s s s VDSS 600 V 600 V 600 V RDS(on) < 0.42 Ω < 0.42 Ω < 0.42 Ω ID 14 A 14 A 14 A Pw 190 W 190 W 190 W 3 1 2 TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY 3 12 TO-220 I2SPAK 3 2 1 TO-247 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.
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