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STB14NM50N
N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFET in a D²PAK package
Datasheet - production data
TAB
3 1
D2PAK
Features
Order code VDS @ TJmax RDS(on) max ID
STB14NM50N 550 V
0.32 Ω
12 A
• 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance
Applications
• Switching applications
Figure 1. Internal schematic diagram
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Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
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Order code STB14NM50N
Table 1.
STB14NM50N Datasheet
