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STB14N80K5
N-channel 800 V, 0.400 Ω typ., 12 A MDmesh™ K5 Power MOSFET in a D²PAK package
Datasheet - production data
TAB
2 3
1
D²PAK
Figure 1: Internal schematic diagram
Features
Order code STB14N80K5
VDS 800 V
RDS(on) max. 0.445 Ω
ID 12 A
Industry’s lowest RDS(on) x area Industry’s best figure of merit (FoM) Ultra-low gate charge 100% avalanche tested Zener-protected
Applications
Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
STB14N80K5 Datasheet
