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STB13007DT4 - High voltage fast-switching NPN power transistor

Description

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure to enhance switching speeds.

Electronic transformers for halogen lamps Switch mode power supplies

Features

  • Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range High voltage capability Integrated free-wheeling diode Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Fully characterized at 125 °C Large RBSOA In compliance with the 2002/93/EC European Directive 1 D2PAK (T0-263).
  • 3 Internal schematic diagram.

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www.DataSheet4U.com STB13007DT4 High voltage fast-switching NPN power transistor General features ■ Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range High voltage capability Integrated free-wheeling diode Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Fully characterized at 125 °C Large RBSOA In compliance with the 2002/93/EC European Directive 1 D2PAK (T0-263) ■ ■ ■ ■ ■ ■ ■ ■ 3 Internal schematic diagram Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure to enhance switching speeds.
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