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STB13005
High voltage fast-switching NPN power transistor
Features
■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Through hole TO-262 (I2PAK) power package
in tube (suffix “-1”)
Applications
■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies
Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
123 I2PAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking (1)
Package
Packaging
STB13005-1
B13005A B13005B
I2PAK
Tube
1.
STB13005 Datasheet
