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SD57060 - RF POWER TRANSISTOR

Description

The SD57060 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz.

The SD57060 is designed for high gain and broadband performance operating in common source mode at 28V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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® SD57060 RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs s s s s EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 60 W with 11.5 dB gain @ 945 MHz BeO FREE PACKAGE M243 epoxy sealed ORDER CODE BRANDING SD57060 TSD57060 DESCRIPTION The SD57060 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57060 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for base station applications requiring high linearity. PIN CONNECTION 1. Drain 2.
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