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SD57030-01 - RF POWER TRANSISTOR

Description

The SD57030-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz.

The SD57030-01 is designed for high gain and broadband performance operating in common source mode at 28V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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® SD57030-01 RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 30 W with 13 dB gain @ 945 MHz BeO FREE PACKAGE s s s s DESCRIPTION The SD57030-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57030-01 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for base stations applications requiring high linearity. M250 epoxy sealed ORDER CODE BRANDING SD57030-01 XSD57030-01 PIN CONNECTION 1. Drain 2. Gate 3.
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