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SD56120
RF power transistor, the LdmoST family
Features
■ Excellent thermal stability
■ Common source configuration Push-pull ■ POUT = 100 W with 14 dB gain @ 860 MHz ■ BeO-free package
Description
The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56120 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for broadcast applications from 470 to 860 MHz requiring high linearity.
M246 Epoxy sealed
Figure 1. Pin connections 12
Table 1.
Device summary Order code
SD56120
1-2 Drain 4-5 Gate
5
4 3 Source
Package M246
Branding SD56120
September 2009
Doc ID 6873 Rev 4
1/15
www.st.
SD56120 Datasheet
