Datasheet Details
| Part number | MJD50 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 87.20 KB |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Datasheet |
 MJD50 Datasheet
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| Part number | MJD50 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 87.20 KB |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Datasheet |
MJD50 Datasheet
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The MJD50 is manufactured using Medium Voltage Epitaxial Planar technology, resulting in a rugged high performance cost-effective transistor.
INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitt er-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C St orage Temperature Max.
Operating Junction T emperature Value 500 400 5 1 2 0.6 1.2 15 -65 to 150 150 Uni t V V V A A A A W o o C C January 2000 1/6 MJD50 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 8.33 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 500 V V CE = 300 V V EB = 5 V I C = 30 mA 400 Min.
® MJD50 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) ELECTRICALLY.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MJD50 | NPN Epitaxial Silicon Transistor | Fairchild |
 |
MJD50 | NPN SILICON POWER TRANSISTORS | Motorola |
 |
MJD50 | High Voltage Power Transistors | ON Semiconductor |
 |
MJD50 | NPN Epitaxial Silicon Transistor | Kexin |
 |
MJD50 | Silicon NPN Power Transistor | Inchange Semiconductor |
| Part Number | Description |
|---|---|
| MJD122 | Complementary power Darlington transistors |
| MJD122-1 | COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
| MJD127 | Complementary power Darlington transistors |
| MJD127-1 | COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
| MJD127T4 | Complementary power Darlington transistors |
| MJD2955 | Complementary Silicon Power Transistors |
| MJD3055 | Complementary Silicon Power Transistors |
| MJD31B | Complementary Silicon Power Transistors |
| MJD31C | Low voltage NPN power transistor |
| MJD32B | COMPLEMENTARY SILICON POWER TRANSISTORS |