MJD122
Features
- Low collector-emitter saturation voltage
- Integrated antiparallel collector-emitter diode
Applications
- General purpose linear and switching
Description
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
3 1 DPAK
Figure 1. Internal schematic diagrams
Table 1. Device summary
Order codes
Marking
MJD122T4
MJD127T4
MJD127
NPN: R1= 7 KΩ R2= 70 Ω
PNP: R1= 16 KΩ R2= 60 Ω
Polarity NPN PNP
Package DPAK
Packaging Tape and reel
April 2009
Doc ID 3541 Rev 11
1/12
.st.
Content
Content
MJD122, MJD127
1 Electrical ratings
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- - . . . . 3 2 Electrical characteristics
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2.1 Electrical characteristics (curves)
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