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M48Z2M1Y - 16 Mbit (2 Mb x 8) ZEROPOWER SRAM

General Description

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Key Features

  • Integrated, ultra low power SRAM, power-fail control circuit, and batteries.
  • Conventional SRAM operation; unlimited )WRITE cycles t(s.
  • 10 years of data retention in the absence of cpower du.
  • Automatic power-fail chip deselect and WRITE roprotection P.
  • WRITE protect voltages te(VPFD = power-fail deselect voltage): le.
  • M48Z2M1Y: VCC = 4.5 to 5.5 V; 4.2 V ≤ VPFD ≤ 4.5 V so.
  • M48Z2M1V: VCC = 3.0 to 3.6 V; b2.8 V ≤ VPFD ≤ 3.0 V O.
  • Batteries are internally.

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Brand Logo Part Number Description Manufacturer
STMicroelectronics Logo M48Z2M1V 16 Mbit (2 Mb x 8) ZEROPOWER SRAM STMicroelectronics

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER® SRAM Not recommended for new design Features ■ Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited )WRITE cycles t(s■ 10 years of data retention in the absence of cpower du■ Automatic power-fail chip deselect and WRITE roprotection P■ WRITE protect voltages te(VPFD = power-fail deselect voltage): le– M48Z2M1Y: VCC = 4.5 to 5.5 V; 4.2 V ≤ VPFD ≤ 4.5 V so– M48Z2M1V: VCC = 3.0 to 3.6 V; b2.8 V ≤ VPFD ≤ 3.