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BULK128D-B - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

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www.DataSheet4U.com ® BULK128D-B HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s s STMicroelectronics PREFERRED SALESTYPE INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED SOT-82 1 2 3 APPLICATIONS: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS s DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
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