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SFF25P20S2I - N-Channel Power MOSFET

Features

  • polySi gate cell structure Low ON-resistance UIS (unclamped inductive switching) rated Hermetically Sealed, Isolated Package Low package inductance Stress relief provided by flexible leads.
  • several options available Improved (RDS(ON) QG) figure of merit TX TXV S Level screening available.

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Datasheet Details

Part number SFF25P20S2I
Manufacturer SSDI
File Size 154.11 KB
Description N-Channel Power MOSFET
Datasheet download datasheet SFF25P20S2I Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF25P20S2I series 25 AMP / 200 Volts 125 mΩ P-Channel MOSFET Features: • • • • • • polySi gate cell structure Low ON-resistance UIS (unclamped inductive switching) rated Hermetically Sealed, Isolated Package Low package inductance Stress relief provided by flexible leads – several options available Improved (RDS(ON) QG) figure of merit TX TXV S Level screening available DESIGNER’S DATA SHEET SMD 2 isolated NOTE: SEE DASH# DEFINITION TABLE FOR AVAILABLE LEAD FORMING CONFIGURATION • • Maximum Ratings Drain - Source Voltage Gate – Source Voltage Max. Continuous Drain Current Max.
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