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SFF25P20 - P-Channel MOSFET

Features

  • polySi gate cell structure.
  • Low ON-resistance.
  • UIS (unclamped inductive switching) rated.
  • Hermetically Sealed, Isolated Package.
  • Low package inductance.
  • Stress relief provided by flexible leads.
  • several options available.
  • Improved (RDS(ON) QG) figure of merit.
  • TX, TXV, S-Level screening available Continuous transient @ TC = 25ºC @ TC = 25ºC @ TC = 25ºC Junction to Case Symbol VDSS VGS ID1 ID3 IAR EAR PD TOP & TS.

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Datasheet Details

Part number SFF25P20
Manufacturer SSDI
File Size 118.15 KB
Description P-Channel MOSFET
Datasheet download datasheet SFF25P20 Datasheet

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Full PDF Text Transcription

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Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number/Ordering Information 1/ SFF25P20 ___ ___ │ └ Screening 2/ │ __ = Not Screened │ TX = TX Level │ TXV = TXV │ └ S = S Level Package 2/ S2I = SMD2 Isolated M = TO-254 Maximum Ratings Drain - Source Voltage Gate – Source Voltage Max. Continuous Drain Current Max. Instantaneous Drain Current (Tj limited) Max.
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