Datasheet4U Logo Datasheet4U.com

SSF6NS70UGS - N-Channel MOSFET

Description

The SSF6NS70UGS series MOSFETs is a new technology, which combines an innovative super junction technology and advance process.

This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving.

Features

  • TO-251S.
  • High dv/dt and avalanche capabilities.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance SSF6NS70UGS Marking and pin Assignment Schematic diagram.

📥 Download Datasheet

Datasheet preview – SSF6NS70UGS

Datasheet Details

Part number SSF6NS70UGS
Manufacturer SILIKRON
File Size 422.71 KB
Description N-Channel MOSFET
Datasheet download datasheet SSF6NS70UGS Datasheet
Additional preview pages of the SSF6NS70UGS datasheet.

📁 Similar Datasheet

  • SSF6NS70UG - N-Channel MOSFET (GOOD-ARK)
  • SSF6NS70UD - N-Channel MOSFET (GOOD-ARK)
  • SSF6NS70D - 700V N-Channel MOSFET (GOOD-ARK)
  • SSF6NS70F - 700V N-Channel MOSFET (GOOD-ARK)
  • SSF6NS70G - 700V N-Channel MOSFET (GOOD-ARK)
  • SSF6N40D - 400V N-Channel MOSFET (GOOD-ARK)
  • SSF6N60G - N-Channel MOSFET (GOOD-ARK)
  • SSF6N70A - Advanced Power MOSFET (Samsung Electronics)
  • SSF6N80A - Advanced Power MOSFET (Samsung Electronics)
  • SSF6N80A - Advanced Power MOSFET (Fairchild Semiconductor)
Other Datasheets by SILIKRON

Full PDF Text Transcription

Click to expand full text
Main Product Characteristics: VDSS RDS(on) 700V 1.1Ω (typ.) ID 6A ① Features and Benefits: TO-251S  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance SSF6NS70UGS Marking and pin Assignment Schematic diagram Description: The SSF6NS70UGS series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving.
Published: |