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SSF6N80F - N-Channel MOSFET

Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Features

  • TO220F.
  • Advanced MOSFET process technology.
  • Special designed for PWM, load switching and general purpose.

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Datasheet preview – SSF6N80F

Datasheet Details

Part number SSF6N80F
Manufacturer SILIKRON
File Size 504.82 KB
Description N-Channel MOSFET
Datasheet download datasheet SSF6N80F Datasheet
Additional preview pages of the SSF6N80F datasheet.

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Full PDF Text Transcription

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Main Product Characteristics: VDSS RDS(on) 800V 2.2Ω (typ.) ID 5.5A Features and Benefits: TO220F  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF6N80F Marking and pin Assignment Schematic diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
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