1SS373 - SILICON EPITAXIAL S CHOTTKY BARRIER DIODE

Product Overview

SEMTECH

Datasheet Details

Part number	1SS373
Manufacturer	SEMTECH
File Size	469.91 KB
Description	SILICON EPITAXIAL S CHOTTKY BARRIER DIODE
Datasheet	1SS373 Datasheet
Additional preview pages of the 1SS373 datasheet.

Product details

Description

Cathode Anode 12 SY Absolute Maximum Ratings (T j = 25? ) Parameter Maximum (peak) Reverse Voltage Reverse Voltage Maximum (peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Range Top View Marking Code: "SY" Simplified outline SOD-323 and symbol Symbol VRM VR IFM IO IFSM Ptot TJ Ts Topr Value 15 10 200 100 1 150 125 -55 to +125 -40 to +100 Unit V V mA mA A mW ? ? ? Characteristics at T

Features

Low forward voltage: VF = 0.23V (typ. ) @IF = 5mA.

📁 Similar Datasheet

1SS370 - Surface Mount Switching Diode (GME)
1SS372 - Silicon Epitaxial Schottky Barrie Diode (Toshiba Semiconductor)
1SS374 - Silicon Epitaxial Schottky Barrie Diode (Toshiba Semiconductor)
1SS375 - Schottky Barrier Diode (Sanyo Semicon Device)
1SS376 - Switching diode (Rohm)
1SS377 - Silicon Epitaxial Schottky Barrie Diode (Toshiba Semiconductor)
1SS378 - Silicon Epitaxial Schottky Barrie Diode (Toshiba Semiconductor)
1SS379 - Silicon Epitaxial Schottky Barrie Diode (Toshiba Semiconductor)

Other Datasheets by SEMTECH

1SS314 - SILICON EPITAXIAL PLANAR DIODE
1SS352 - Silicon Epitaxial Planar Switching Diode
1SS355 - SILICON EPITAXIAL PLANAR SWITCHING DIODES
1SS367 - SILICON EPITAXIAL S CHOTTKY BARRIER DIODE
1SS368 - SILICON EPITAXIAL PLANAR DIODE
1SS369 - SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

Published: May 26, 2015 |