1SS368 - SILICON EPITAXIAL PLANAR DIODE

Product Overview

SEMTECH

Datasheet Details

Part number	1SS368
Manufacturer	SEMTECH
File Size	408.59 KB
Description	SILICON EPITAXIAL PLANAR DIODE
Datasheet	1SS368 Datasheet
Additional preview pages of the 1SS368 datasheet.

Product details

Description

Cathode Anode 12 W8 Top View Marking Code: "W8" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (T j = 25? ) Parameter Symbol Value Maximum (peak) Reverse Voltage VRM 85 Reverse Voltage VR 80 Maximum (peak) Forward Current IFM 200 Average Forward Current IO 100 Surge Current (10ms) Power Dissipation IFSM Ptot 1 1501) Junction Temperature TJ 125 Storage Temperature Range Ts -55 to +125 1) Mounted on a glass epoxy circuit board of 20x20mm, pad dimension of 4x4m

Features

Small package.
Low forward voltage: VF=0.98V (typ. ).
Fast reverse recovery time: trr=1.6ns (typ. ).
Small total capacitance: CT=0.5pF (typ. ).

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Published: May 26, 2015 |