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SW1N70C - MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • High ruggedness.
  • RDS(ON) (Max 16 Ω)@VGS=10V.
  • Gate Charge (Max 6nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-92 12 3 1. Gate 2. Drain 3. Source General.

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Datasheet Details

Part number SW1N70C
Manufacturer SEMIPOWER
File Size 671.15 KB
Description MOSFET
Datasheet download datasheet SW1N70C Datasheet

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Full PDF Text Transcription

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SAMWIN SW1N70C Features ■ High ruggedness ■ RDS(ON) (Max 16 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-92 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at AC adaptors and SMPS. N-channel MOSFET BVDSS : 700V ID : 0.
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