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SW1N55D - MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • TO-251.
  • High ruggedness.
  • RDS(ON) (Max6.5Ω)@VGS=10V.
  • Gate Charge (Typical 7nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General.

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Datasheet Details

Part number SW1N55D
Manufacturer SEMIPOWER
File Size 499.54 KB
Description MOSFET
Datasheet download datasheet SW1N55D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SAMWIN SW1N55D N-channel IPAK MOSFET Features TO-251 ■ High ruggedness ■ RDS(ON) (Max6.5Ω)@VGS=10V ■ Gate Charge (Typical 7nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. BVDSS : 550V ID : 1A RDS(ON) :6.
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