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SW1N60L - MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • High ruggedness.
  • RDS(ON) (Max 23 Ω)@VGS=10V.
  • Gate Charge (Max 4.5nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-92 1 2 3 1. Gate 2. Drain 3. Source General.

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Datasheet Details

Part number SW1N60L
Manufacturer SEMIPOWER
File Size 453.21 KB
Description MOSFET
Datasheet download datasheet SW1N60L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SAMWIN SW1N60L N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 23 Ω)@VGS=10V ■ Gate Charge (Max 4.5nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-92 1 2 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at AC adaptors and SMPS. BVDSS : 600V ID : 0.
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