HFS3N80 - 800V N-Channel MOSFET

SEMIHOW

Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ (Typ. ) ) Extended Safe Operating Area Lower RDS(ON) : 4.0 Ω (Typ. ) @VGS=10V 100% Avalanche Tested TC=25℃ unless otherwise specified RDS(on) typ = 4.0 Ω ID = 3.0 A TO-220F 11 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL.

HFS3N80 800v n-channel mosfet by SEMIHOW - Datasheet Preview

Datasheet Details

Part number	HFS3N80
Manufacturer	SEMIHOW
File Size	667.13 KB
Description	800V N-Channel MOSFET
Datasheet	HFS3N80 Datasheet

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Full PDF Text Transcription

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HFS3N80 Dec 2005 BVDSS = 800 V HFS3N80 800V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ (Typ.) ) Extended Safe Operating Area Lower RDS(ON) : 4.0 Ω (Typ.) @VGS=10V 100% Avalanche Tested TC=25℃ unless otherwise specified RDS(on) typ = 4.0 Ω ID = 3.0 A TO-220F 11 2 3 1.Gate 2. Drain 3.

Published: May 9, 2014 |