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Features
Adanced trench process technonlog Extremely low on-resistance RDS(on) High Ruggedness 100% Avalance Tested
Application
Power Management in inverter System Synchronous Rectificatiou
SFP(B)120N120
N-MOSFET 120V,120A, 8.0mΩ
Product Summary
VDS RDS(on)@VGS=10V ID
120V 8.0 mΩ 120A
Part ID
Package Type
SFP120N120
TO-220
SFB120N120
TO-263
Marking 120N120 120N120
Maximum Ratings
Parameter
Drain-source voltage Continuous drain current TC = 25°C (Package limit) TC = 100°C (Package limit) Pulsed drain current TC = 25°C, tp limited by Tjmax Avalanche energy, single pulse (L=0.033mH,VDS=80V) Gate-emitter voltage Power dissipation TC = 25°C
Operating junction and storage temperature
Symbol VDS
ID
ID pulse EAS VGS Ptot
Tj , Tstg
Value 120
120 90 480 600 ±20 230
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SFB120N120 Datasheet
