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SFB120N100 - N-MOSFET

Features

  • Uses advanced SGT MOSFET technology.
  • Extremely low on-resistance RDS(on).
  • High Ruggedness.
  • 100% Avalance Tested.

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Datasheet Details

Part number SFB120N100
Manufacturer SCILICON
File Size 1.54 MB
Description N-MOSFET
Datasheet download datasheet SFB120N100 Datasheet

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Full PDF Text Transcription

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SFPS(BFP)1(B2)01N2100N0100B SGT N-MOSFET100V, 120A, 4.0mΩ Features  Uses advanced SGT MOSFET technology  Extremely low on-resistance RDS(on)  High Ruggedness  100% Avalance Tested Application  Motor Drives  UPS (Uninterruptible Power Supplies)  DC/DC converter  General purpose applications Product Summary VDS RDS(on)@VGS=10V ID 100V 4.0 mΩ 120A Part ID Package Type SFP120N100 TO-220 SFB120N100 TO-263 Marking 120N100 120N100 Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Package limit) TC = 100°C (Package limit) Pulsed drain current TC = 25°C, tp limited by Tjmax Avalanche energy, single pulse (L=0.
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