RU8205G
Features
- 20V/6A, RDS (ON) =21mΩ (Typ.) @ VGS=4.5V RDS (ON) =30mΩ (Typ.) @ VGS=2.5V
- Super High Dense Cell Design
- Reliable and Rugged
- Lead Free and Green Available
Pin Description
TSSOP-8
Applications
- Power Management
Absolute Maximum Ratings
Dual N-Channel MOSFET
Symbol
Parameter mon Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TA=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
TA=25°C
②
RθJA
TA=25°C Continuous Drain Current(VGS=4.5V)
TA=70°C
Maximum Power Dissipation
TA=25°C TA=70°C
Thermal Resistance-Junction to Ambient
Rating
20 ±12 150 -55 to 150 1.7
①
24 6 4.5 1.5
0.96 83.5
Unit
V °C °C...
