TSSOP-8
Applications
Power Management
Absolute Maximum Ratings
Dual N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Con
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RU8205G
N-Channel Advanced Power MOSFET
MOSFET
Features
• 20V/6A, RDS (ON) =21mΩ (Typ.) @ VGS=4.5V RDS (ON) =30mΩ (Typ.) @ VGS=2.5V
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Available
Pin Description
TSSOP-8
Applications
• Power Management
Absolute Maximum Ratings
Dual N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TA=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
TA=25°C
ID
PD
②
RθJA
TA=25°C Continuous Drain Current(VGS=4.
RU8205G Datasheet
