TO252
Applications
High Speed Power Switching
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode
Features
75V/70A, RDS (ON) =9mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
Fast Switching and Fully Avalanche Rated.
Reliable and Rugged.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant)
Pin.
The following content is an automatically extracted verbatim text
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RU7570L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 75V/70A, RDS (ON) =9mΩ(Typ.
RU7570L Datasheet
